Is Npn or Pnp the better choice for millimetre-wave AlGaAs/GaAs heterojunction bipolar transistors?
- 30 September 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (9) , 1209-1210
- https://doi.org/10.1016/0038-1101(90)90101-j
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Electron mobility in p-type GaAsApplied Physics Letters, 1988
- Optimization of maximum oscillation frequency of a bipolar transistorSolid-State Electronics, 1987
- Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speedIEEE Transactions on Electron Devices, 1987
- High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysisIEEE Electron Device Letters, 1986
- The performance potential of p-n-p heterojunction bipolar transistorsIEEE Electron Device Letters, 1985
- Monte Carlo investigation of transient hole transport in GaAsJournal of Applied Physics, 1984
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Electron drift velocity in n-GaAs at high electric fieldsSolid-State Electronics, 1977
- Design and performance of small-signal microwave transistorsSolid-State Electronics, 1972