High-temperature operation of high-power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer
- 8 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (2) , 149-151
- https://doi.org/10.1063/1.106002
Abstract
High‐power and high‐reliable operation of transverse‐mode stabilized InGaAlP laser diodes has been achieved by a selectively buried ridge waveguide structure with a thin (0.02 μm) active layer. A composition‐shifted In0.5+δGa0.5−δP active layer was employed in order to improve the temperature characteristic. A maximum cw light output power of 54 mW was obtained for the laser with antireflection and high‐reflection coatings. A high‐power cw operation above 30 mW output power was maintained even at a 60 °C heat‐sink temperature. Stable cw operation exceeding 1000 h has been achieved for 20 mW output power at 50 °C.Keywords
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