High-power operation of heterobarrier blocking structure InGaAlP visible light laser diodes
- 30 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (18) , 1718-1719
- https://doi.org/10.1063/1.103125
Abstract
Heterobarrier blocking structure InGaAlP visible light laser diodes employing a thin active layer (0.04 μm) and asymmetry coatings have been fabricated. The high light-output power operation with this heterobarrier blocking structure was investigated. The light-output power versus cw current curve was linear up to 43 mW and a maximum light output power of 51 mW was obtained. A high-power operation such as 20 mW was maintained at 40 °C. Stable oscillation in the fundamental transverse mode was obtained up to 30 mW. These results show that this heterobarrier blocking structure supplies a sufficient current confinement effect even under a high-light output power operation.Keywords
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