Observation of the 2s state excitons in (111)-oriented GaAs/AlxGa1xAs quantum-well structures

Abstract
Transitions associated with the 2s excited-state heavy-hole excitons have been observed in the low-temperature photoluminescence excitation spectra of (111)-oriented GaAs/Al0.3 Ga0.7As multiple quantum wells. The binding energy of the 1s heavy-hole excitons has been found to be about 10% larger in (111)-oriented quantum wells than that in (100)-oriented ones.