Excitonic coupling in GaAs/GaAlAs quantum wells in an electric field
- 23 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (8) , 832-835
- https://doi.org/10.1103/physrevlett.58.832
Abstract
We have observed coupling between excited and ground states of excitons in GaAs quantum wells under an electric field. Low-temperature photoluminescence excitation spectra show peaks corresponding to excited states of the heavy-hole exciton and to the ground state of the light-hole exciton. With increasing field, the peaks converge and then they show anticrossing and share their oscillator strengths. As a result of this interaction, fine structure attributed to the 2p state of the heavy-hole exciton is resolved.Keywords
This publication has 15 references indexed in Scilit:
- Unambiguous observation of thestate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structuresPhysical Review B, 1986
- Observation of luminescence from theheavy-hole exciton in GaAs-(AlGa) As quantum-well structures at low temperaturePhysical Review B, 1986
- Photocurrent spectroscopy of GaAs/As quantum wells in an electric fieldPhysical Review B, 1986
- The effects of the hole subband mixing on the energies and oscillator strengths of excitons in a quantum wellJournal of Physics C: Solid State Physics, 1986
- Excitons in GaAs quantum wellsJournal of Luminescence, 1985
- A Wannier Exciton in a Quantum Well: Subband DependenceJournal of the Physics Society Japan, 1984
- Energy levels of Wannier excitons in quantum-well structuresPhysical Review B, 1984
- Wannier exciton in quantum wellsPhysical Review B, 1983
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981