Comparison between GaAs and AlxGa1-xAs Quantum Wells in the Light Emission Limit
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L101-103
- https://doi.org/10.1143/jjap.24.l101
Abstract
Photoluminescence properties were compared between two types of multi-quantum-well (MQW) structures. One of them had a potential well layer composed of binary GaAs, and the other was composed of ternary Al x Ga1-x As. It is shown that the ternary well MQW structure is more favorable with respect both to higher emission energy and to photoluminescence linewidth than the binary well MQW structure.Keywords
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