ORIENTATION EFFECTS IN THE RESISTIVITY OF Ta FILMS SPUTTERED IN OXYGEN
- 15 September 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (6) , 264-265
- https://doi.org/10.1063/1.1653392
Abstract
Tantalum films deposited by sputtering in an O–Ar mixture consist of the tetragonal β phase. As the flow rate of the mixture into the sputtering system increases, the preferred‐growth orientation changes from (200) to (202) and the resistivity ρ increases from 265 to 1100μΩ‐cm. The value of Δρ/ΔT decreases monotonically with increasing (202) orientation, suggesting that the electrical properties are due to the β‐Ta phase rather than to intergrain tunneling.Keywords
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