Structural and optical analysis of epitaxial GaN on sapphire
- 1 May 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (5) , 637-644
- https://doi.org/10.1088/0268-1242/12/5/019
Abstract
We investigate epitaxial layers of GaN on c-plane sapphire by photoluminescence, optical density and x-ray diffraction. Besides the well known luminescence from hexagonal GaN we have identified two emission bands from cubic GaN. We observe the emission of the donor bound exciton in cubic GaN at 3.279 eV. The luminescence at 3.15 - 3.21 eV is explained as the cubic donor - acceptor recombination. The corresponding acceptor binding energy is found to be low as . For layers of 400 nm thickness, the optical density yield values for the average contents of cubic GaN between 10 and 25%. Proper growth conditions minimize the cubic contents in the upper regions of such layers.Keywords
This publication has 20 references indexed in Scilit:
- Picosecond dynamics of excitons in cubic GaNPhysical Review B, 1995
- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAsJournal of Applied Physics, 1995
- Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 1995
- Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H-SiC substratesJournal of Applied Physics, 1994
- Photoluminescence of zinc-blende GaN under hydrostatic pressureApplied Physics Letters, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Growth of GaN by ECR-assisted MBEPhysica B: Condensed Matter, 1993
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971