Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation
- 15 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (7) , 979-981
- https://doi.org/10.1063/1.123429
Abstract
Flash-lamp annealing was used for activation and crystal recovery of highly aluminum-implanted 6H-SiC wafers. In comparison with conventional furnaceannealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations (⩾5×10 20 cm −3 ). The lowest resistivitymeasured at room temperature was 0.01 Ω cm. In this case, the layers are characterized by metallic conduction with weak dependence of the hole concentration on the temperature. This effect is caused by freezing-in of the enhanced solubility of aluminum in SiC at the extraordinary high temperature of about 2000 ° C during the light-flash.Keywords
This publication has 5 references indexed in Scilit:
- Growth and Characterisation of SiC Power Device MaterialMaterials Science Forum, 1998
- Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantationMaterials Science Forum, 1998
- Physical Properties of SiCMRS Bulletin, 1997
- Al, Al/C and Al/Si implantations in 6H-SiCJournal of Electronic Materials, 1996
- Activation of ion implanted dopants in α-SiCApplied Physics Letters, 1995