Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique
- 1 November 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 72 (8) , 795-798
- https://doi.org/10.1016/0038-1098(89)90911-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electron and hole cyclotron resonance in semimetallic GaSb/InAs/GaSb quantum wellsSolid State Communications, 1988
- GaSb-InAs-GaSb heterostructures studied under hydrostatic pressurePhysical Review B, 1987
- The influence of supercooling on the liquid phase epitaxial growth of inas1−xsbx on (100) GASB substratesJournal of Electronic Materials, 1987
- Pressure Dependence of Band Offsets in an InAs-GaSb SuperlatticePhysical Review Letters, 1986
- Effect of hydrostatic pressure and alloy composition on sulfur- and selenium-related impurity states in heavily doped n-type SbPhysical Review B, 1986
- Electrical characteristics of InAsSb/GaSb heterojunctionsApplied Physics Letters, 1986
- High-magnetic-field and high-hydrostatic-pressure investigation of hydrogenic- and resonant-impurity states inn-type indium arsenidePhysical Review B, 1985
- Heavy metal fluoride glasses and fibers: A reviewJournal of Lightwave Technology, 1984
- Tight-binding study of the electronic structure of the InAs–GaSb (001) superlatticeJournal of Vacuum Science and Technology, 1978
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957