Influence of surface reconstruction on the As desorption process from a (001) GaAs surface evaluated by improved high-energy electron-reflectivity measurements

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Abstract
Electron-beam specular reflectivity in high-energy electron diffraction is evaluated quantitatively by measuring the reflected electron-beam current. Using this method, As desorption from a (001) GaAs surface is studied in detail. This desorption process is sensitive to the transition of surface reconstruction and the activation energy for this process changes according to the reconstruction transition.