Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy
- 8 September 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (10) , 1921-1922
- https://doi.org/10.1063/1.1609055
Abstract
We report the room-temperature operation of λ≈8.5 μm InGaAs/AlInAs quantum cascade lasers, grown by low-pressure metalorganic vapor phase epitaxy. The necessary control of interfacial abruptness and layer thicknesses was achieved by the use of individually purged vent/run valves and a growth rate of 0.8 μm/h for the active region. Low-temperature threshold current densities of ∼1.5 kA cm−2 and a maximum operating temperature of 290 K have been measured in pulsed operation. These values are comparable with those reported for structures of a similar design grown using molecular beam epitaxy.Keywords
This publication has 5 references indexed in Scilit:
- Quantum cascade lasers grown by metalorganic vapor phase epitaxyApplied Physics Letters, 2003
- Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier coolerApplied Physics Letters, 2001
- Continuous-wave and high-power pulsed operation of index-coupled distributed feedback quantum cascade laser at λ≈8.5 μmApplied Physics Letters, 1998
- Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laserApplied Physics Letters, 1997
- Quantum Cascade LaserScience, 1994