The chemical theory of the minority carrier injection ratio in a real Schottky diode

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Abstract
A chemical-thermodynamical theory of Schottky contacts is used in a study of the minority carrier injection ratio gamma . In particular the dependence of gamma on the current density is shown. The effect of an intermediate oxide layer which results in an increase of gamma is also investigated. The influence of interface states is taken into account, and it is shown that the contribution of fast interface states depends closely on their trapping properties and on surface-band bending. It is also found that slow interface states affect the gamma ratio only in the presence of an oxide layer by enhancing its effect.