Thermal stability and dopant drive-out characteristics of CoSi2 polycide gates
- 1 May 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (9) , 4712-4714
- https://doi.org/10.1063/1.352743
Abstract
BF2‐implanted CoSi2 polycide gates that are stable at high temperatures up to 1000 °C have been fabricated. The use of CoSi2 polycide as a boron diffusion source was evaluated using a metal‐oxide‐semiconductor capacitor structure on a p‐type Si substrate. This structure is useful in monitoring the diffusion of the electrically activated dopants from the silicide towards the polycrystalline silicon‐SiO2 interface. Our results show that using BF2‐implanted CoSi2 as a diffusion source is effective in doping polycrystalline silicon gates degenerately without any degradation of the polycide resistivity.This publication has 6 references indexed in Scilit:
- Ultra Shallow Junction Formation Using Diffusion from Silicides: I . Silicide Formation, Dopant Implantation and Depth ProfilingJournal of the Electrochemical Society, 1992
- Technology limitations for N/sup +//P/sup +/ polycide gate CMOS due to lateral dopant diffusion in silicide/polysilicon layersIEEE Electron Device Letters, 1991
- WSi2 and CoSi2 as diffusion sources for shallow-junction formation in siliconJournal of Applied Physics, 1991
- High-temperature effects on a CoSi2/poly-Si metal oxide semiconductor gate configurationJournal of Vacuum Science & Technology A, 1990
- Thermal Stability of CoSi2 on Single Crystal and Polycrystalline SiliconMRS Proceedings, 1990
- Formation and thermal stability of CoSi2 on polycrystalline SiJournal of Applied Physics, 1985