Thin film microstructure simulation of RF bias planarized metal interconnects using a ballistic deposition model
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 353-355
- https://doi.org/10.1109/vmic.1991.153023
Abstract
A ballistic deposition model, SIMBAD, has been extended to simulate the RF biased sputter planarization process. The model provides qualitative depictions of the thin film microstructure of metal deposited over integrated circuit topography. The model successfully predicts the increased planarity and filling of films deposited over high aspect ratio features with an applied substrate bias. Columnar features, low density regions, voids, and cracks are also successfully depicted. Confirmation of SIMBAD simulations with tungsten films is demonstrated Author(s) Dew, S.K. Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada Smy, T. ; Brett, M.J.Keywords
This publication has 5 references indexed in Scilit:
- A ballistic deposition model for films evaporated over topographyThin Solid Films, 1990
- Simulation of density variation and step coverage for a variety of via/contact geometries using SIMBADIEEE Transactions on Electron Devices, 1990
- Planarization by radio-frequency bias sputtering of aluminum as studied experimentally and by computer simulationJournal of Vacuum Science & Technology A, 1985
- Planar Deposition of Aluminum by RF/DC Sputtering with RF BiasJournal of the Electrochemical Society, 1985
- SiO2 planarization by two-step rf bias-sputteringJournal of Vacuum Science & Technology B, 1985