180 mW DBR lasers with first-order grating in GaAsemitting at 1062 nm
- 16 March 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (6) , 534-535
- https://doi.org/10.1049/el:20000465
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- DBR lasers emitting at 1060 nm with first-ordergrating in (InGa)P waveguide layerElectronics Letters, 1999
- MOVPE growth of tunable DBR laser diode emitting at 1060 nmJournal of Crystal Growth, 1998
- Singlemode InGaAs/GaAs distributed Bragg reflector laser diodes operating at 1083 nmElectronics Letters, 1993