Molecular beam epitaxy of semiconductor films—atomic dimension control and the evaluation of crystal growth dynamics

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Abstract
The development of new semiconductor devices exploiting quantum size eflects demands unprecedented levels of control and understanding of thin film growth at the atomic level. One of the main methods employed is molecular beam epitaxy, in which single crystal films are produced from the interaction of thermal, neutral, collision-free atomic or molecular beams with a substrate surface in ultra-high vacuum. After a description of the basic processes used for both elemental and compound semiconductors, some of the more important aspects of the surface chemistry andJilm growth dynamics involved are discussed, including some indication of the experimental and theoretical techniques which are required for this work. Specific examples are cited to illustrate our present level of understanding and the ways in which this is being exploited to fabricate complex structures.