Growth of III-V compounds on vicinal planes by molecular beam epitaxy

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Abstract
The dynamics of growth of III-V compounds by molecular beam epitaxy can be evaluated experimentally using the temporal variation of the intensity of reflection high-energy electron diffraction patterns. The use of substrate surfaces which are slightly misoriented from an exact low-index plane (vicinal planes) enables direct measurements to be made of cation migration parameters, but a correct analysis requires both step anisotropy and nucleation on the terraces to be taken into account. The experimental results are strongly supported by Monte Carlo simulations of growth, especially with regard to growth mode changes and the anisotropy of cation incorporation at steps. The direct growth of quantum wires (structures giving quantum confinement of carriers in two dimensions) on vicinal planes has been achieved experimentally and it is shown here how the wire quality, as determined by its compositional integrity, can be obtained by the simulation technique. The effects of flux, temperature, misorientation direction and interruptions of growth on quality are demonstrated.