Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
- 18 August 2003
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (7) , 1322-1324
- https://doi.org/10.1063/1.1604191
Abstract
The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs.Keywords
This publication has 8 references indexed in Scilit:
- Nonlinear orthogonal spreading sequence design for third generation DS-CDMA systemsIEE Proceedings - Communications, 2002
- Ultrabroadband photoconductive detection: Comparison with free-space electro-optic samplingApplied Physics Letters, 2001
- Detection of up to 20 THz with a low-temperature-grown GaAs photoconductive antenna gated with 15 fs light pulsesApplied Physics Letters, 2000
- Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THzApplied Physics Letters, 2000
- Free-space electro-optics sampling of mid-infrared pulsesApplied Physics Letters, 1997
- Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InPJapanese Journal of Applied Physics, 1997
- Subpicosecond carrier lifetimes in arsenic-ion-implanted GaAsApplied Physics Letters, 1995
- Formation of As precipitates in GaAs by ion implantation and thermal annealingApplied Physics Letters, 1993