Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InP
- 1 September 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (9A) , L1175
- https://doi.org/10.1143/jjap.36.l1175
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Measurement of free-space terahertz pulses via long-lifetime photoconductorsApplied Physics Letters, 1995
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial FilmsJapanese Journal of Applied Physics, 1994
- Modeling of femtosecond electromagnetic pulses from large-aperture photoconductorsOptics Letters, 1993
- Scaling of terahertz radiation from large-aperture biased InP photoconductorsOptics Letters, 1993
- Saturation properties of large-aperture photoconducting antennasIEEE Journal of Quantum Electronics, 1992
- Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperaturesIEEE Journal of Quantum Electronics, 1992
- Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayersApplied Physics Letters, 1991
- Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interfaceApplied Physics Letters, 1991
- Characterization of an optoelectronic terahertz beam systemIEEE Transactions on Microwave Theory and Techniques, 1990
- High-brightness terahertz beams characterized with an ultrafast detectorApplied Physics Letters, 1989