Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (10) , 2464-2472
- https://doi.org/10.1109/3.159553
Abstract
No abstract availableKeywords
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