The effect of the hydrogen carrier gas flow rate on the electrical properties of epitaxial GaAs prepared in a hydride system
- 31 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 233-238
- https://doi.org/10.1016/0022-0248(74)90310-8
Abstract
No abstract availableKeywords
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