Formation of InxGa1−xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

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Abstract
Heteroepitaxial InxGa1−xAs/GaAs structures have been formed for the first time by pulsed laser induced mixing of molecular beam epitaxy deposited In films (∼200 Å) on GaAs (100) substrates. The process occurs by a melt‐induced, rapid‐mixing and solidification process driven by a XeCl pulsed excimer laser. The laser has a 27 ns full width at half maximum pulse width at 308 nm with its energy density of 0.28–0.61 J cm−2 homogenized into a 4×4 mm square area which is stepped across the wafer. InxGa1−xAs layers with x values, as determined by both x‐ray diffraction and Rutherford backscattering spectrometry simulation ranging from x=0.21–0.26 and thicknesses of 77–94 nm, have been formed. The formation of single‐crystal layers has been verified by 4He ion channeling and cross‐section transmission electron microscopy.