The role of compound formation and heteroepitaxy in indium-based ohmic contacts to GaAs
- 15 September 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1888-1891
- https://doi.org/10.1063/1.334173
Abstract
Ohmic contacts to n-GaAs formed by the heat treatment of In films have been investigated. The widely-accepted model for ohmic contact formation, involving the establishment of a heavily-doped layer, fails in this case because In is not a n-type dopant in GaAs. It is shown that the heat treatment results in the formation of a graded InxGa1−xAs (0≤x<1) heterojunction. This heterojunction is responsible for the ohmic behavior.This publication has 13 references indexed in Scilit:
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