Models for ohmic contacts on graded crystalline or amorphous heterojunctions
- 31 July 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (7) , 543-550
- https://doi.org/10.1016/0038-1101(82)90054-5
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Liquid phase epitaxial growth of GaAs from AuGeNi meltsSolid-State Electronics, 1977
- Investigation of the AuGeNi system used for alloyed contacts to GaAsSolid-State Electronics, 1977
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich meltsSolid-State Electronics, 1972
- Alloying Behavior of Au and Au–Ge on GaAsJournal of Applied Physics, 1971
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971
- Metallic contacts for gallium arsenideSolid-State Electronics, 1970
- Contact Resistances of Several Metals and Alloys to GaAsJournal of the Electrochemical Society, 1969
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963