Metallic contacts for gallium arsenide
- 31 August 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (8) , 1189-1197
- https://doi.org/10.1016/0038-1101(70)90129-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- CARRIER GENERATION AND SWITCHING PHENOMENA IN n—GaAs DEVICESApplied Physics Letters, 1967
- Probing Technique for Measuring the Potential Distribution in SemiconductorsReview of Scientific Instruments, 1967
- Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probeElectronics Letters, 1966
- SWITCHING AND LOW-FIELD BREAKDOWN IN n-GaAs BULK DIODESApplied Physics Letters, 1966
- OPTICAL MODULATION IN BULK GaAs USING THE GUNN EFFECTApplied Physics Letters, 1966
- New methods of observing current waveforms in bulk GaAsProceedings of the IEEE, 1966
- Microwave phenomena in bulk GaAsIEEE Transactions on Electron Devices, 1966
- The Chemical Polishing of Gallium Arsenide in Bromine-MethanolJournal of the Electrochemical Society, 1963