CARRIER GENERATION AND SWITCHING PHENOMENA IN n—GaAs DEVICES
- 1 August 1967
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (3) , 83-85
- https://doi.org/10.1063/1.1755046
Abstract
By measuring the steady‐state potential distribution in n—GaAs samples with ohmic contacts, very high electric fields have been found near the anode contacts. In samples with n · L (carrier concentration × sample length) products greater than 1012 cm‐2, switching from the Gunn mode to a high current, lower (constant) voltage state takes place along with the appearance of a high field at the anode. In samples with n · L products less than 1012 cm‐2 the buildup of the high field is accompanied by a sudden increase in current. These high currents are due to carrier generation in a narrow region near the anode.Keywords
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