Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts
- 30 June 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (6) , 601-604
- https://doi.org/10.1016/0038-1101(72)90001-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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