Ohmic contacts in GaAs

This publication has 11 references indexed in Scilit:

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  Solid-State Electronics, 1979
• Compositionally modulated sputtered InSb/GaSb superlattices: Crystal growth and interlayer diffusion
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• Development ot ohmic contacts for GaAs devices using epitaxial Ge films
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• Investigation of the AuGeNi system used for alloyed contacts to GaAs
  Solid-State Electronics, 1977
• Reliability Study of GaAs MESFET's
  IEEE Transactions on Microwave Theory and Techniques, 1976
• Some Aspects of GaAs MESFET Reliability
  IEEE Transactions on Microwave Theory and Techniques, 1976
• A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
  Solid-State Electronics, 1975
• Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs
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• Crystallization of evaporated Si/Ag and Ge/Al films
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• Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts
  Solid-State Electronics, 1972