High-temperature, high-voltage operation of pulse-doped diamond MESFET

1 May 1997

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 18 (5) , 222-224
https://doi.org/10.1109/55.568772

Abstract

The fabrication and operation of a pulse-doped diamond metal-semiconductor field-effect transistor (MESFET) is presented showing a usable source drain voltage of 70 V and no breakdown up to 100 V at 350/spl deg/C operating temperature. A channel sheet concentration of 8.5/spl times/10/sup 12/ cm/sup -2/ could be fully modulated leading to a maximum transconductance of 0.22 mS/mm, although full activation of the boron acceptor had not been reached. For an optimized device structure, with reduced gate length below 0.25 /spl mu/m and full activation, more than 10 W/mm RF-power density can be predicted.

Keywords

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