Pulse-doped diamond p-channel metal semiconductor field-effect transistor
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (1) , 36-38
- https://doi.org/10.1109/55.363207
Abstract
A p-type diamond metal semiconductor field-effect transistor (MESFET) structure, utilizing a boron pulse-doped layer as the conducting channel, has been successfully fabricated. The pulse-doped structure consists of an undoped diamond buffer layer, a highly doped thin diamond active layer, and an undoped diamond cap layer grown by the microwave plasma assisted chemical vapor deposition method. It is shown that this field-effect transistor with a gate length of 4 /spl mu/m and the gate width of 39 /spl mu/m exhibits an extrinsic transconductance of 116 /spl mu/S/mm with both pinch-off characteristics and current saturation.Keywords
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