High-temperature operation of polycrystalline diamond field-effect transistors
- 1 February 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (2) , 66-68
- https://doi.org/10.1109/55.215110
Abstract
Operation of polycrystalline diamond field-effect transistors (FETs) at temperatures up to 285 degrees C and drain-to-source voltages of up to 100 V has been demonstrated. The devices were fabricated from B-doped polycrystalline diamond grown by a microwave plasma-enhanced chemical vapor deposition (CVD) technique. At 150 degrees C, the devices exhibited saturation of drain current and a peak transconductance of 65 nS/mm. These are the first polycrystalline diamond devices to demonstrate saturation. Device characteristics at 250 degrees C also show saturation and increased transconductance of 300 nS/mm. Characterization was not performed at temperatures exceeding 285 degrees C due to gate leakage current above 10 nA.Keywords
This publication has 11 references indexed in Scilit:
- Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etchingIEEE Electron Device Letters, 1992
- Polycrystalline diamond field-effect transistorsDiamond and Related Materials, 1992
- Ohmic contacts on diamond by B ion implantation and Ti-Au metallizationIEEE Electron Device Letters, 1992
- Current-voltage characteristics of in situ doped polycrystalline diamond field-effect transistorsIEEE Transactions on Electron Devices, 1992
- An ion-implanted diamond metal-insulator-semiconductor field-effect transistorIEEE Electron Device Letters, 1991
- Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor depositionJournal of Applied Physics, 1991
- High-temperature thin-film diamond field-effect transistor fabricated using a selective growth methodIEEE Electron Device Letters, 1991
- Resistivity of chemical vapor deposited diamond filmsApplied Physics Letters, 1989
- Epitaxial Growth of Diamond and Diamond DevicesMRS Proceedings, 1989
- Synthesis of diamonds by use of microwave plasma chemical-vapor deposition: Morphology and growth of diamond filmsPhysical Review B, 1988