Current-voltage characteristics of in situ doped polycrystalline diamond field-effect transistors
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2666-2667
- https://doi.org/10.1109/16.163536
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Polycrystalline diamond field-effect transistorsDiamond and Related Materials, 1992
- Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond FilmJapanese Journal of Applied Physics, 1991
- An ion-implanted diamond metal-insulator-semiconductor field-effect transistorIEEE Electron Device Letters, 1991