Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond Film

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Abstract
Metal-insulator-semiconductor (MIS) devices have been fabricated using a polycrystalline diamond film doped with boron. The diamond film has been deposited on Si substrate by a hot-filament chemical vapor deposition method. The SiO2 film has been deposited on the diamond by a plasma-assisted CVD method and aluminum has been evaporated as a gate on the SiO2 film. The MIS capacitance was varied as a function of voltage applied between the gate and substrate. Further, the metal-insulater-semiconductor field-effect transistor has indicated transistor operation capabilities at room temperature. These results suggest a possibility that the polycrystalline diamond film can be used as an electronics material.