High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method
- 1 February 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (2) , 37-39
- https://doi.org/10.1109/55.75696
Abstract
Selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO/sub 2/ as a masking layer. The hole mobility of selectively grown films varied between 210 and 290 cm/sup 2//V-s for hole concentration between 1.0*10/sup 14/ and 6.9*10/sup 14/ cm/sup -3/. The technique was used to fabricate a thin-film diamond field-effect transistor operational at 300 degrees C. The channel resistance of the device is an exponential function of temperature. In combination with the selective growth method, this device can be used as a starting point for the development of high-temperature diamond-based integrated circuits.Keywords
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