Electrical Properties of Homoepitaxial Diamond Films
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The barrier height of Schottky diodes with a chemical-vapor-deposited diamond baseJournal of Applied Physics, 1989
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- Ohmic contacts to semiconducting diamondIEEE Electron Device Letters, 1988
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982
- The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamondsSolid-State Electronics, 1973