Polycrystalline diamond field-effect transistors
- 25 March 1992
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 1 (2-4) , 89-92
- https://doi.org/10.1016/0925-9635(92)90005-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- An ion-implanted diamond metal-insulator-semiconductor field-effect transistorIEEE Electron Device Letters, 1991
- Diamond MESFET using ultrashallow RTP boron dopingIEEE Electron Device Letters, 1991
- Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor depositionJournal of Applied Physics, 1991
- High-temperature thin-film diamond field-effect transistor fabricated using a selective growth methodIEEE Electron Device Letters, 1991
- Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor depositionApplied Physics Letters, 1990
- Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasmaIEEE Electron Device Letters, 1990
- Field-Effect Transistors using Boron-Doped Diamond Epitaxial FilmsJapanese Journal of Applied Physics, 1989
- Resistivity of chemical vapor deposited diamond filmsApplied Physics Letters, 1989
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982