Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching
- 1 September 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (9) , 462-464
- https://doi.org/10.1109/55.192795
Abstract
A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degrees C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2*10/sup 13/ cm/sup -3/ and 280 cm/sup 2//V-s, respectively. The maximum transconductance was 87 mu S/mm at 200 degrees C.Keywords
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