Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
- 1 November 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (18) , 4127-4129
- https://doi.org/10.1063/1.1812835
Abstract
An alternative surface passivation process for high- k Gemetal-oxide-semiconductor(MOS) device has been studied. The surface Si H 4 annealing was implemented prior to Hf O 2 deposition. X-ray photoelectron spectroscopy analysis results show that the Si H 4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the Hf O 2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Å and a leakage current of 1.16 × 10 − 5 A ∕ cm 2 at 1 V gate bias was achieved for Ta N ∕ Hf O 2 ∕ Ge MOS capacitors with the Si H 4 surface treatment.Keywords
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