Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
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- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (8) , 473-475
- https://doi.org/10.1109/led.2002.801319
Abstract
For the first time, we have successfully demonstrated the feasibility of integrating a high-permittivity (/spl kappa/) gate dielectric material zirconium oxide into the MOS capacitors fabricated on pure germanium substrates. The entire fabrication process was essentially performed at room temperature with the exception of a 410/spl deg/C forming gas anneal. After processing steps intended to remove the germanium native oxide interlayer between the zirconium oxide dielectric and germanium substrate, an excellent capacitance-based equivalent SiO/sub 2/ thickness (EOT) on the order of 5-8 /spl Aring/ and capacitance-voltage (C-V) characteristics with hysteresis of 16 mV have been achieved. Additionally, excellent device yield and uniformity were possible using this low thermal budget process.Keywords
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