New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (4) , 1230-1233
- https://doi.org/10.1116/1.582331
Abstract
No abstract availableKeywords
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