Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (12) , 639-640
- https://doi.org/10.1109/55.20421
Abstract
The fabrication and performance of dummy-gate self-aligned germanium MOSFETs utilizing a native germanium oxynitride gate insulator is reported. Based on device characteristics, channel mobility at 300 K is estimated as 940 cm/sup 2//Vs. Common-source characteristics show good saturation and turn-off, and do not exhibit looping or other anomalies. It is felt these results suggest that integration of germanium MOSFETs with photodiodes for monolithic optical-fiber receivers operating at 1.3- mu m wavelength should be possible. The results also indicate that the bulk mobility advantage which germanium exhibits relative to silicon carries over in some measure to FET channel mobility.Keywords
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