Study and optimization of alumina and germanium dioxide and their multilayer capacitor properties
- 1 September 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 170 (1-2) , 105-114
- https://doi.org/10.1016/s0168-583x(00)00184-1
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Reluctant etchability of dielectric Al2O3 films sputtered in water vapor and ArO2 environmentsThin Solid Films, 1991
- Properties of Al2O3 thin films prepared by ion-assisted evaporationThin Solid Films, 1991
- Alumina films by sputter deposition with Ar/O2: Preparation and characterizationJournal of Vacuum Science & Technology A, 1989
- Characterization of Al2O3 films deposited by various methodsThin Solid Films, 1986
- Electrical insulating properties and thermal stability of r.f.-sputtered alumina coatingsThin Solid Films, 1985
- Preparation and properties of Al2O3 films by d.c. and r.f. magnetron sputteringThin Solid Films, 1982
- Thickness dependence of the dielectric constant and resistance of Al2O3 filmsJournal of Applied Physics, 1977
- Properties of rf‐sputtered Al2O3 films deposited by planar magnetronJournal of Vacuum Science and Technology, 1977
- Selection of thin film capacitor dielectricsThin Solid Films, 1968
- Thin-Film Al-Al2O3-Al CapacitorsIEEE Transactions on Parts, Materials and Packaging, 1965