Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure
- 1 March 2005
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 36 (3-6) , 231-233
- https://doi.org/10.1016/j.mejo.2005.04.001
Abstract
No abstract availableKeywords
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