Study of Nitrogen Implanted in Aluminum at Various Doses
- 1 March 1995
- journal article
- research article
- Published by Taylor & Francis in Materials and Manufacturing Processes
- Vol. 10 (2) , 171-182
- https://doi.org/10.1080/10426919508935013
Abstract
Experimental and theoretical studies are carried out to understand transport of nitrogen in aluminum during implantation process. 60 keV and 120 keV N2 + ion are implanted in pure Al substrates at doses ranging from l×l017 to 9×l017 N-atoms per cm2. RBS and Glancing angle XRD studies are carried out. RBS studies show that the depth profiles are gaussian in nature at low doses and gradually become rectangular in shape as the dose increases. XRD analysis reveals that AlN is formed even at low doses. Theoretical simulations of depth profiles at low dose, include displacement mixing and radiation enhanced diffusion, which are modelled to be described by a diffusion like process. Effective diffusion coefficient in radiation environment is found to be equal to 8×l0−16 cm2.sec−1. At high doses, when new N-atoms are added during implantation their transport gets linked with the already formed AlN. This leads to a rectangular shape of depth profiles observed at high doses.Keywords
This publication has 8 references indexed in Scilit:
- Study of nitrogen distributions implanted at high temperature into aluminumNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Compound formation effects in computing implantation profilesMaterials Science and Engineering: A, 1989
- Ion bombardment effects on the near‐surface composition during sputter profilingSurface and Interface Analysis, 1988
- Formation of ain by nitrogen molecule ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- A1N Substrates with High Thermal ConductivityIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1985
- On the nature of the phases formed when metals are implanted with oxygen or nitrogenRadiation Effects, 1982
- Preparation of AIN Coatings on Mo by RF‐Reactive Ion Plating: The Deposition MechanismJournal of the Electrochemical Society, 1981
- Characteristics of the metal insulator semiconductor structure:AlN/SiApplied Physics Letters, 1981