Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide-An Effect of Thermal Excitation
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6S)
- https://doi.org/10.1143/jjap.31.2020
Abstract
Ion bombardment-induced thermal reaction between a fluorocarbon adlayer and a SiO2 surface in a reactive-ion-etching (RIE) environment which was simulated in an ultrahigh-vacuum thermal desorption mass spectroscopy (TDS) apparatus has been studied. The RIE-induced fluorocarbon chemisorbed layer, covering the SiO2 surface, was observed to be thermally stimulated to react chemically with the SiO2 in the TDS apparatus with an activation energy of approximately 1.9 eV. A terminal group, chemisorbed at the adlayer/SiO2 interface, could be an active participant in the thermal reaction. This observation indicates the possibility that chemical sputtering could occur in the actual RIE through a thermal excitation step, induced by ion bombardment. A significant difference in the RIE-induced mixing of fluorine atoms between SiO2 and Si also appeared in their TDS spectra.Keywords
This publication has 16 references indexed in Scilit:
- Thermal desorption of gasesPublished by Elsevier ,2002
- Mechanisms of High PSG/SiO2 Selective Etching in a Highly Polymerized Fluorocarbon PlasmaJapanese Journal of Applied Physics, 1991
- Roles of Ions and Radicals in Silicon Oxide EtchingJapanese Journal of Applied Physics, 1990
- Reactions of laser-generated CF2 on silicon and silicon oxide surfacesSurface Science, 1989
- Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanismsJournal of Vacuum Science & Technology A, 1987
- Simulation of plasma-assisted etching processes by ion-beam techniquesJournal of Vacuum Science and Technology, 1982
- Selective Reactive Ion Beam Etching of SiO2 over Polycrystalline SiJournal of the Electrochemical Society, 1982
- Investigation of plasma etching mechanisms using beams of reactive gas ionsJournal of Vacuum Science and Technology, 1981
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981
- Mechanism of silicon etching by a CF4 plasmaJournal of Vacuum Science and Technology, 1978