Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001)
- 3 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (9) , 1107-1109
- https://doi.org/10.1063/1.118499
Abstract
We have evaluated an “effective depletion width” of ⩽45 Å and the sign (n-type/upward band bending) of the near surface electric field in low-temperature grown GaAs (001) using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit split E1, E1+Δ1 optical features. Our results provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs.Keywords
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