Transient intensity noise of semiconductor lasers: experiments and comparison with theory
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 26 (2) , 225-230
- https://doi.org/10.1109/3.44953
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A theoretical analysis of the transient intensity noise of semiconductor lasersIEEE Journal of Quantum Electronics, 1989
- Three- and four-layer LPE InGaAs(P) mushroom stripe lasers for λ = 1.30, 1.54, and 1.66 µmIEEE Journal of Quantum Electronics, 1985
- An analysis of gain-switched semiconductor lasers generating pulse-code-modulated light with a high bit rateIEEE Journal of Quantum Electronics, 1984
- Measurement of spontaneous emission factor for injection lasersIEEE Journal of Quantum Electronics, 1982
- Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasersIEEE Journal of Quantum Electronics, 1977
- Quantum noise VII: The rate equations and amplitude noise in lasersIEEE Journal of Quantum Electronics, 1967
- Intensity Fluctuations in the Output of cw Laser Oscillators. IPhysical Review B, 1966