Diffusion Coefficient of Interstitial Iron in Silicon
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7R) , 1282-1283
- https://doi.org/10.1143/jjap.28.1282
Abstract
The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression D Fe=9.5×10-4 exp (-0.65/k T) cm2s-1 in the temperature range of 800–1070°C.Keywords
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