Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3A) , L172
- https://doi.org/10.1143/jjap.23.l172
Abstract
This paper proposes a bi-level structure for a maskless ion etching using focused ion beam. The bi-level structure can be realized by using a new phenomenon, wherein the Ga+ doped AZ1450J bottom layer is etched off by a high dose of more than 0.76 µC/cm. A Si top layer with 70 nm linewidth is fabricated. The linewidth can be controlled to nanometer dimensions by changing the dose. Moreover, fine structures with 100 nm are demonstrated using bi-level structures for the substrate etching and lift-off processes.Keywords
This publication has 4 references indexed in Scilit:
- High resolution sputtering using a focused ion beamThin Solid Films, 1982
- FET fabrication using maskless ion implantationJournal of Vacuum Science and Technology, 1981
- Dry Development of Resists Exposed to Focused Gallium Ion BeamJapanese Journal of Applied Physics, 1980
- High-resolution, ion-beam processes for microstructure fabricationJournal of Vacuum Science and Technology, 1979